, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUZ53A general description n-channel enhancement mode field-effect power transistor in a metal envelope. this device is intended for use in switched mode power supplies (smps), motor control, welding, dc/dc and dc/ac converters, and in general purpose switching applications. quick reference data symbol vds id pfot rds parameter drain-source voltage drain current (d.c.) total power dissipation drain-source on-state resistance max. 1000 2,6 78 5,0 unit v a w fl mechanical data dimensions in mm net mass: 12 g pinning: 1 ?= gate 2 = drain 3 ? source t 16,9 i 84 30,1 | ?,? //?h / ? /. 19,5 ?10,9? 1,6- fig, 1 to3: drain connected to mounting base. 4,2 , * 1,55 max notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. accessories supplied on request: refer to mounting instructions for to3 envelopes. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec 134) symbol vds vdgr vgs id id idm plot tstg tj parameter drain-source voltage drain-gate voltage gate-source voltage drain current (d.c.) drain current (d.c.) drain current (pulse peak value) total power dissipation storage temperature junction temperature conditions _ rgs = 20 kn - tmb= 30c tmb = 100c tmb= 25 "c tmb= 25 'c - - min. - _ - - - - - -55 - max. ' 1000 1000 20 2,6 1,7 10 78 150 150 unit v v v a a a w c c thermal resistances from junction to mounting base from junction to ambient rthj-mb=l,6k/w rthj.a =35 k/w static characteristics tmb ~ 25 "c unless otherwise specified symbol v(br)dss vgs(to) idss idss igss rds(on) parameter drain-source breakdown voltage gate threshold voltage zero gate voltage drain current zero gate voltage drain current gate source leakage current drain-source on-state resistance conditions vgs = 0v; id = 0,25ma vds = vgs; id = 1 >"a vds = i ooo v; vgs - o v;tj = 25 c vds " 1 000 v; vgs = 0 v;tj = 1 25 c vgs = 20v;vds = ov vgs = 10 v; id =1,5 a min. 1000 2,1 typ. 3,0 20 0,1 10 4,5 max. 4,0 250 1,0 100 5,0 unit v v *?a ma na n dynamic characteristics 25 c unless otherwise specified symbol sfs ciss coss crss *don tr *doff tf ld ls parameter forward transconductance input capacitance output capacitance feedback capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time internal drain inductance internal source inductance conditions vds = 25v; id =1,5 a vgs = ov;vds = 2s v;f = 1 mhz vdd=30v;id = 2ai vgs * 10 v; rgs ? 50 n; rgen "= 50 ft measured from contact screw on header closer to source pin and centre of die measured from source lead 6 mm from package to source bond pad min. 0,7 - - - typ. 1,5 1600 70 30 30 40 110 60 5,0 12,5 max. - 2100 120 55 45 60 140 80 - unit s pf pf pf ns ns ns ns nh nh
reverse diode ratings and characteristics tmb * 25 *c unless otherwise specified symbol idr idrm vsd trr qrr parameter continuous reverse drain current pulsed reverse drain current diode forward on-voltage reverse recovery time reverse recovery charge conditions tmb = 2sc tmb = 2s?c if = 5,2a;vgs-ov; if = 2,6 a;tj = 2sc -dif/dt= 100 a/ms: min. - - ?""" - typ. - - 1,05 2000 15 max, 2,6 10 1,3 - unit a a v ns mc
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